The movable mask was placed behind the double-slit, see figure 1. The mask was moved from one side to the other (figure 2 top to bottom). Initially the majority of the electrons are blocked. As the mask is moved, slit 1 becomes partially, then fully open. When one slit is open, single- slit diffraction can be observed (P1 in figures 1(b) and 2). Feynman indicates this as the solid black curve P1 (figure 1(b)), which is just the central order of the single-slit diffraction pattern. Because of the finite separation of the mask and double-slit, weak double-slit diffraction can be seen in the negative first order of the single-slit diffraction pattern (see left edge of P1 in figure 2).
As the mask is moved further, more electrons can travel through both slits, changing the pattern from single-slit to double-slit diffraction. When the mask is centered on the double-slit, both slits are completely open and full double-slit diffraction can be observed (P12 in figures 1(c) and 2). In this position, interaction between the mask and the diffracting electrons is negligible. The edges of the mask are 2250 nm away from the center and would only affect diffraction orders greater than the 50th. The mask is then moved further and the reverse happens; double- slit diffraction changes back to single-slit diffraction (P2 in figures 1(b) and 2). Now, the single- slit diffraction pattern has a weak contribution of double-slit diffraction in its positive first order (see right edge of P2 in figure 2). (See supplementary movie 1 for more positions of the mask.)
Electron build-up patterns were recorded with the mask centered on the double-slit. The electron source’s intensity was reduced so that the electron detection rate in the pattern was about 1 Hz. At this rate and kinetic energy, the average distance between consecutive electrons was 2.3 × 10^6 m.